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 HL8325G
GaAlAs Laser Diode
Description
The HL8325G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
Features
* * * * Infrared light output: p = 820 to 840 nm High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW Built-in monitor photodiode Single longitudinal mode
190
HL8325G
Absolute Maximum Ratings (TC = 25C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 40 50* 2 30 -10 to +60 -40 to +85
1
Units mW mW V V C C
1. Maximum 50% duty cycle, maximum 1 s pulse width
Optical and Electrical Characteristics (TC = 25 3 C)
Item Optical output power Threshold current Slope efficiency Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Astigmatism Symbol PO Ith p // Is AS Min 40 -- 0.4 820 7 18 20 -- Typ -- 40 0.5 830 10 22 40 5 Max -- 70 0.9 840 14 32 130 -- Unit mW mA mW/mA nm deg. deg. A m 24 mW/ I (32 mW) - I (8 mW) PO = 40 mW PO = 40 mW, FWHM PO = 40 mW, FWHM VR (PD) = 5 V, PO = 4 mW PO = 4 mW, NA = 0.4 Test Conditions Kink free
191
HL8325G
Typical Characteristic Curves
192
HL8325G
Typical Characteristic Curves (cont)
193


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